- 门电流
- 闸控电流
- 栅电流
- gate: gate2 n. 1.〔古语〕街道，路〔一般 ...
- current: adj. 1.通用的，流行的。 2.现在的，现时的，当时 ...
- grid current; gate current: 栅流
- drain gate leakage current: 漏栅极漏电流
- equivalent gate current: 等效门电流; 等效栅极电流
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gate current中文什么意思
- 门电流
- 闸控电流
- 栅电流
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例句与用法
- Once the device begins to conduct , it is latched on and the gate current can be removed
一旦器件（晶闸管）导通，门极电流即可去掉。 - With respect to a bipolar transistor , the condition in which the gate current equals or exceeds the value necessary to provide full emitter collector conduction
就双极型晶体管而言,其门电流等于或超过必要的值,使发射极集电极充分导通的一种状态。 - The thyristor can be trigged into the on - state by applying a pulse of positive gate current for a short duration provided that the device is in its forward blocking state
如果是处于正向阻断状态，只要在门极提供一个短暂的正脉冲，晶闸管就会导通。 - The large gate current brings out a lot of questions such as thermal stability , thermal dissipation , lifetime etc , so , it affects the device ' s function and the device ca n ' t work normally
如此大的栅电流，将会产生很多严重的问题，如热稳定性、散热、寿命等问题，严重地影响着器件性能，使器件不能正常工作，以致限制了集成电路的进一步发展。 - Since metal - oxide - semiconductor ( mos ) device appeared , integration of integrated circuit ( ic ) expands as moore law . meanwhile the dimension of device scales down , the thickness of sio2 gate dielectric shrinks as the same law . but as the thickness of sio2 gate dielectric reaches at isa , the gate current rises very quickly and reaches at 1 10a / cm2
自从金属-氧化物-半导体( mos )器件出现以来，集成电路的集成度按照摩尔定律增加，相应地，器件的物理尺寸按照等比缩小的原则不断缩小， sio _ 2作为栅介质的厚度不断缩小，特征尺寸在0 . 1 m以下的集成电路要求sio _ 2栅介质的厚度小于1 . 7nm 。